Research Facilities Accessed
SEMICONDUCTOR GROWTH: MOLECULAR BEAM EPITAXY [CENTRAL FACILITY AT THE CRNN, CU]
The CRNN, CU hosts a Dual Chamber Gen 930 Molecular Beam Epitaxy System from VEECO. The two chambers I and III are dedicated for III-Nitride growth and Silicon-germanium growth respectively. The system is capable of handling 3-inch diameter wafers.
Both chambers are equipped with Reflection High Energy Electron Diffraction (RHEED) systems for in-situ real-time monitoring of the growth.
SEMICONDUCTOR CHARACTERIZATION [CENTRAL FACILITY AT THE CRNN, CU]
There are a range of materials characterization tools as part of the central facilities of the CRNN, CU. The equipment most relevant to our work include a 9KW Rotating anode X-ray Diffraction system from Rigaku. Housed at the CRNN is a JEOL Field Emission Scanning Electron Microscope with cathodoluminescence spectroscopy and imaging attachment for the deep UV range.
The Dark Room of the CRNN hosts a range of optical and electrical characterization equipment, 4K and 10K Helium close-cycle cryostats, and other components, that can be used to custom-design and carry out low temperature photoluminescence, photocurrent spectroscopy, optical absorption spectroscopy and other related measurements.
OPTICAL LITHOGRAPHY [CENTRAL FACILITY AT THE CRNN, CU]
The semiconductor device fabrication facilities of the CRNN include a MA6 Mask Aligner housed inside a class 100 clean room, along with other necessary support equipment such as spin coaters, pre-bake and post-bake ovens, and surface profilometer used for optical lithography. Majority of the device fabrication work has been carried out here.
Microelectronics Laboratory (MicroLab_RPE)
The microelectronics laboratory at the Institute of Radio Physics and Electronics, University of Calcutta houses a large number of semiconductor fabrication and testing equipment. Originally developed in the 1990s, it has been renovated over the years with the continuous addition of new items. It is located at the ground floor of the Sisir Mitra Bhavan of the “Rajabazar Science College”.
The laboratory was originally designed for Silicon microelectronics, but recent focus has diversified towards the development of MEMS structures as well as ZnO nanomaterials and thin films.
OPTICAL LITHOGRAPHY [MICROELECTRONICS LABORATORY, RPE]
TThe facilities for optical lithography at the MicroLab includes a MJB3 Mask Aligner from SUSS Microtec, Spin Coater, Pre-bake and post-bake ovens and optical microscopes for observation.
PHYSICAL VAPOR DEPOSITION [MICROELECTRONICS LABORATORY, RPE]
There are a number of PVD systems at the MicroLab, including legacy equipment for resistive evaporation, that employ diffusion pumps. The latest system is TMP-based and oil-free, and includes both resistive heating filaments, as well as a four-pocket e-gun source, QCM thickness measurement systems, etc.
THERMAL PROCESSING AND CVD [MICROELECTRONICS LABORATORY, RPE]
The legacy systems of the MicroLab includes three stack multi-zone furnaces from TEMPRESS and THERMACO for Oxidation/Diffusion of silicon wafers. More recent acquisitions are CVD systems that focus on smaller wafers, and are used for deposition of ZnO nanowires by the vapor-liquid-solid system, as well as the growth of Sol-gel derived thin films. An MTI Rapid Thermal Annealer is also present and may be used for development of low resistance contacts.
CHARACTERIZATION FACILITIES [RPE]
The optical characterization facilities include a complete suit of electrical measurement systems, including source-measure units, power supplies, picoAmmeter, nanovoltmeter, pulsed current and voltage sources, capacitance measurement systems, etc. The optical systems include Helium cadmium Laser, a Helium Silver laser, broadband sources covering deep UV to visible ranges, multiple-grating monochromator, optical and optomechanical components, micrometer stages, as well several wafer probe-stations. There are also several spectrometers and optical fiber based detection systems.
Custom-designed setups can be built to fully characterize both thin films as well as fully fabricated devices either at the wafer level or after packaging. These systems have been employed to carry out photoluminescence measurements, as well as the testing of light emitting diodes and photodetectors at various stages of development.
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